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| NEW PRODUCT NEW PRODUCT NEW PRODUCT 2N3904 SMALL SIGNAL TRANSISTORS (NPN) TO-92 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) FEATURES NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the PNP transistor 2N3906 is recommended. On special request, this transistor is also manufactured in the pin configuration TO-18. This transistor is also available in the SOT-23 case with the type designation MMBT3904. C max. AE 0.022 (0.55) 0.098 (2.5) E MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18g B Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation at TA = 25C at TC = 25C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range NOTES: (1) Valid provided that leads are kept at ambient temperature. VCBO VCEO VEBO IC Ptot 60 40 6.0 200 625 1.5 V V V mA mW W C/W C C RqJA Tj TS 250 (1) 150 65 to +150 1/5/99 2N3904 ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage at IC = 10 mA, IE = 0 Collector-Emitter Breakdown Voltage at IC = 1 mA, IB = 0 Emitter-Base Breakdown Voltage at IE = 10 mA, IC = 0 Collector Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Base Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Collector-Emitter Cutoff Current VEB = 3 V, VCE = 30 V Emitter-Base Cutoff Current VEB = 3 V, VCE = 30 V DC Current Gain at VCE = 1 V, IC = 0.1 mA at VCE = 1 V, IC = 1 mA at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 50 mA at VCE = 1 V, IC = 100 mA Input Impedance at VCE = 10 V, IC = 1 mA, f = 1 kHz Voltage Feedback Ratio at VCE = 10 V, IC = 1 mA, f = 1 kHz Gain-Bandwidth Product at VCE = 20 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance at VCB = 5 V, f = 100 kHz Emitter-Base Capacitance at VEB = 0.5 V, f = 100 kHz V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VCEsat VBEsat VBEsat ICEV IEBV hFE hFE hFE hFE hFE hie hre fT CCBO CEBO 60 40 6 40 70 100 60 30 1 0.5 a 104 300 0.2 0.3 0.85 0.95 50 50 300 10 8 a 104 4 8 V V V V V V V nA nA kW MHz pF pF 2N3904 ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz Output Admittance at VCE = 1 V, IC = 1 mA, f = 1 kHz Noise Figure at VCE = 5 V, IC = 100 mA, RG = 1 kW, f = 10 E 15000 Hz Delay Time (see Fig. 1) at IB1 = 1 mA, IC = 10 mA Rise Time (see Fig. 1) at IB1 = 1 mA, IC = 10 mA Storage Time (see Fig. 2) at IB1 = IB2 = 1 mA, IC = 10 mA Fall Time (see Fig. 2) at IB1 = IB2 = 1 mA, IC = 10 mA hfe 100 400 hoe 1 40 mS NF 5 dB td 35 ns tr 35 ns ts 200 ns tf 50 ns Fig. 1: Test circuit for delay and rise time * total shunt capacitance of test jig and connectors Fig. 2: Test circuit for storage and fall time * total shunt capacitance of test jig and connectors |
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